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KMID : 0380319900450000035
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Journal of Korean Research Institute for Better Living
1990 Volume.45 No. 0 p.35 ~ p.46
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Photostructure Change in Amorphous Semiconductor As-Ge-Se System
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Abstract
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The photostructure of amophous semiconductor AsGeSe_x for which X concentrations are 52.2, 55.6, 63.6, 79 at.％ is investigated. The thin film samples are prepared by the thermal evaporation method. The thin films which are illuminated and annealed are mesured with X-ray diffration and SEM(scanning electron microscopy). When the thin films are illuminated and annealed, the absorption coefficients are increased and the band gap energies are decreased. From the experimental results photodarkening and thermaldarkening were confirmed. It is photodarkening and thermaldarkening that the absorption coefficient is increased and the band gap energy is decreased when the amorphous semiconductor is illuminated and materials increase, then the absorption edge shifts toward the long wavelength. From the SEM the amorphous thin films which are illuminated and annealed are separated into two different phases. The thin films which are illuminated look like the wave shape. This is the spinodal phase separation. The thin films which are annealed look like the globlar shape. This is the binodal phase separation.
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